MCR64-1 thru 10 mcr65-1 thru 10 scrs 55 amperes rms 25 thru 800 volts rating peak repetitive forward and reverse blocking voltage -1 -2 -3 mcr63 -4 mcr64 -5 mcr65 -6 -7 -8 -9 ?10 non-repetitive peak reverse blocking voltage (t * 5 ms) -1 -2 -3 mcr63 -4 mcr64 -5 mcr65 -6 -7 -8 ?9 -10 forward current rms peak surge current (one cycle, 60 hz, tj - -40 to +125c) circuit fusing considerations . (tj = -40 to + 125c. t = 1 to 8.3 ms) peak gate power average gate power (pulse width -= 2 us) peak forward gate current peak gate voltage ? forward reverse operating junction temperature range storage temperature range stud torque symbol vdrm(1 or vrrm vrsm 'tirms) 'tsm |2t pgfm pgf(av) igfm vgfm vgrm tj tstg ? value 25 50 100 200 300 400 500 600 700 800 35 75 150 300 400 500 600 700 800 900 55 550 1255 20 0.5 2 10 10 -40 to -h2s -40 to -t-150 30 unit volts volts amps amps a2s watts watt amps volts c c in. ib. mcr64 swiw mcr63 series imcr65 series quality semi-conductors
mcr63-1 thru mcr63-10 ? MCR64-1 thru MCR64-10 ? mcr65-1 thru mcr65-10 thermal characteristics charactariatle thermal resistance, junction to case pressfit and otud isolated stud symbol "we mm 1 1.1 unit ?cm (1) vrrm for all type* can ba applied on a continuoui dc baaia without incurring damege ratings apply for tero or negative gate voltage. device* ahall not have a positive biaa applied to the gate concurrently with a negative potential on tha anode. electrical characteristics (tc = 25'c unless otherwise noted.) characteristic peak forward or reverse blocking current (rtted vdrm or vrrm. 9?? p?n) tj = 25*c tj = 125-0 forward "on" voltage otm - 1?5 a peak) gate trigger current (continuous dc) |
